PART |
Description |
Maker |
BLF573S BLF573 |
HF / VHF power LDMOS transistor A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
|
BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
L2701-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF6H10L-160-15 BLF6H10L-160 BLF6H10LS-160 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF6G22LS-40BN |
Power LDMOS transistor
|
NXP Semiconductors
|
LC40114 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF6G20-230PRN10 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF8G22LS-160BV-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G20L-200 BLF7G20LS-200 BLF7G20L-200-15 |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|